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| SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 FEBRUARY 1996 7 FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE PARTMARKING DETAIL BCP69 BCP68 BCP68 25 C BCP68 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 25 20 5 100 10 10 0.5 0.6 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 25 20 5 2 1 2 -55 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). TYP. MAX. UNIT V V V nA CONDITIONS. IC=10A IC= 30mA * IE=10A VCB=25V VCB=25V, Tamb=150C VEB=5V IC=1A, IB=100mA* IC=5A, VCE=10V* IC=1A, VCE=1V* IC=5mA, VCE=10V* IC=500mA, VCE=1V* IC=500mA, VCE=1V* MHz IC=100mA, VCE=5V, f=100MHz A A Emitter Cut-Off Current IEBO VCE(sat) VBE(on) V V V 1.0 400 400 50 Static Forward Current hFE 63 BCP68 Transfer Ratio BCP68-25 160 Transition Frequency fT 250 100 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMT449 datasheet. 3 - 19 |
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